IRF140

dv/dt rated hexfet-transistor, to-3, 100V, 28A, 125W, Hermetically Sealed, Repetitive Avalanche Ratings

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Price:: US $2.00~2.50 / piece [Get Latest Price]

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PartNumber:: IRF140

Brand:: International Rectifier - IR | Pack: TO | D/C: 07+

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Products Upload time: 2011-12-27

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Part Number:IRF140
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Product Summary

The IRF140 is a repetitive avalanche and dv/dt rated hexfet-transistor. It is the key to the advanced line of International Rectifier of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The IRF140 transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

Parametrics

IRF140 absolute maxing ratings: (1)ID@VGS=0V, TC=25℃ Continuous Drain Current: 28A; (2)ID@VGS=0V, TC=100℃ Continuous Drain Current: 20A; (3)IDM Pulsed Drain Current①: 112A; (4)PD@TC=25℃ Max. Power Dissipation: 125W; (5)Linear Derating Factor: 1.0W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)EAS Single Pulse Avalanche Energy②: 250mJ; (8)IAR Avalanche Current①: 28A; (9)EAR Repetitive Avalanche Energy①: 12.5mJ; (10)dv/dt Peak Diode Recovery dv/dt③: 5.5V/ns; (11)TJ TSTG Operating Junction Storage Temperature Range: -55 to 150℃; (12)Lead Temperature: 300(0.063 in. (1.6mm) from case for 10s); (13)Weight: 11.5(typical)g.

Features

IRF140 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.