(China (Mainland))
Product Summary
The G40N60UFD is a Insulated Gate Bipolar Transistor. It provides low conduction and switching losses. The G40N60UFD is designed for applications such as motor control and general inverters where high speed switching is a required feature. The applications of the G40N60UFD are AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Parametrics
G40N60UFD absolute maximum ratings: (1)Collector-Emitter Voltage:600 V; (2)Gate-Emitter Voltage:± 20 V; (3)Collector Current @ TC = 25℃:40 A; (4)Collector Current @ TC = 100℃:20 A; (5)Pulsed Collector Current:160 A; (6)Diode Continuous Forward Current @ TC = 100℃:15 A; (7)Diode Maximum Forward Current:160 A; (8)Maximum Power Dissipation @ TC = 25℃:160 W; (9)Maximum Power Dissipation @ TC = 100℃:64 W; (10)Operating Junction Temperature:-55℃ to +150℃; (11)Storage Temperature Range:-55℃ to +150℃; (12)Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds:300℃.
Features
G40N60UFD features: (1)High speed switching; (2)Low saturation voltage: VCE(sat) = 2.3 V @ IC = 20A; (3)High input impedance; (4)CO-PAK, IGBT with FRD: trr = 50ns (typ.).
Diagrams
