Product Summary

The CY7C1019DV33-10VXI is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. The CY7C1019DV33-10VXI has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0through I/O7) is then written into the location specified on the address pins (A0 through A16).

Parametrics

CY7C1019DV33-10VXI absolute maximum ratings: (1)Storage Temperature: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -55℃ to +125℃; (3)Supply Voltage on VCCto Relative GND: -0.3V to + 4.6V; (4)DC Voltage Applied to Outputs in High-Z State: -0.3V to VCC+ 0.3V DC Input Voltage: -0.3V to VCC+ 0.3V; (5)Current into Outputs (LOW): 20 mA; (6)Static Discharge Voltage: > 2001V; (7)(per MIL-STD-883, Method 3015) Latch-up Current: > 200 mA.

Features

CY7C1019DV33-10VXI features: (1)Pin- and function-compatible with CY7C1019CV33; (2)High speed,tAA= 10 ns; (3)Low Active Power, ICC= 60 mA @ 10 ns; (4)Low CMOS Standby Power, ISB2= 3 mA; (5)2.0V Data retention; (6)Automatic power-down when deselected; (7)CMOS for optimum speed/power; (8)Center power/ground pinout; (9)Easy memory expansion with CE and OE options; (10)Available in Pb-free 32-pin 400-Mil wide Molded SOJ, 32-pin TSOP II and 48-ball VFBGA packages.

Diagrams

CY7C1019DV33-10VXI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CY7C1019DV33-10VXI
CY7C1019DV33-10VXI
Cypress Semiconductor
SRAM 1M 512K IND FAST ASYNC SRAM
Data Sheet
0-1: $1.69
1-25: $1.46
25-100: $1.38
100-250: $1.15
CY7C1019DV33-10VXIT
CY7C1019DV33-10VXIT
Cypress Semiconductor
SRAM 1M 512K IND FAST ASYNC SRAM
Data Sheet
0-1: $2.07
1-25: $1.79
25-100: $1.69
100-250: $1.41