CM50DY-12H

Mitsubishi transistor module, Low Drive Power, High Frequency Operation, ±20 Volts Gate-Emitter Voltage

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Price:: US $10.00~35.00 / piece [Get Latest Price]

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	US $10.00~35.00

PartNumber:: CM50DY-12H

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-12

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Part Number:CM50DY-12H
US $10.00 - 35.00
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Product Summary

The CM50DY-12H is a Mitsubishi transistor module. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects of CM50DY-12H are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Parametrics

CM50DY-12H absolute maximum ratings: (1)Junction Temperature Tj: -40 to 150 ℃; (2)Storage Temperature Tstg: -40 to 125 ℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT) VGES: ±20 Volts; (5)Collector Current (Tc = 25℃) IC: 50 Amperes; (6)Peak Collector Current (Tj ≤ 150℃) ICM: 100* Amperes; (7)Emitter Current** (Tc = 25℃) IE: 50 Amperes; (8)Peak Emitter Current** IEM: 100* Amperes; (9)Maximum Collector Dissipation (Tc = 25℃) Pc: 250 Watts; (10)Mounting Torque, M5 Main Terminal: 1.47 to1.96 N · m; (11)Mounting Torque, M6 Mounting: 1.96 to 2.94 N · m; (12)Weight:190 Grams; (13)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso: 2500 Vrms.

Features

CM50DY-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.